Работы, цитирующие эту работу

Работ: 2

Работа: Ultralow-Power Design in Near-Threshold Region

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2019.article.000603

2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.chapter.000013