Работы, цитирующие эту работу

Работ: 2

Работа: Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

1. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541488

2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.chapter.000013