Работы, цитирующие эту работу

Работ: 3

Работа: Initial stages of InAs epitaxy on vicinal GaAs(001)-(2×4)

1. Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth

   Б. Н. Звонков, E. R. Lin’kova, I. G. Malkina +2

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics Letters1996Цитирований: 0

   ABIABI:AkademIndex/openalex/1996.article.000043

2. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000098

3. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000117