Работы, цитирующие эту работу

Работ: 2

Работа: Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

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   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000098

2. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000117