Работы, цитирующие эту работу

Работ: 3

Работа: Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures

1. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

   I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000098

2. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000117

3. Excitonic waveguiding and lasing in wide bandgap semiconductor

   N. N. Ledentsov

   СтатьяSemiconductor Quantum Structures and DevicesPhysics of the Solid State1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000240