Работы, цитирующие эту работу

Работ: 3

Работа: Barrier to Migration of the Silicon Self-Interstitial

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320

3. Formation of radiation defects in silicon structures under low-intensity electron irradiation

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology2001Цитирований: 0

   ABIABI:AkademIndex/openalex/2001.article.000146