Работы, цитирующие эту работу

Работ: 3

Работа: Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in Silicon

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   СтатьяLaser Design and ApplicationsSemiconductors2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   СтатьяSemiconductor materials and interfacesTechnical Physics1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000202

3. Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

   Yu. A. Astrov, L. М. Portsel, А. N. Lodygin +2

   СтатьяSpectroscopy and Laser ApplicationsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000174