Работы, цитирующие эту работу

Работ: 4

Работа: Structural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   СтатьяSemiconductor materials and interfaces2005Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.424565

2. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000252

3. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626

4. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   СтатьяSemiconductor materials and interfaces2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000312