Работы, цитирующие эту работу

Работ: 2

Работа: Si-Ge solid solution single crystal growth by electron beam floating zone technique

1. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   СтатьяSemiconductor materials and interfacesInorganic Materials2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000180

2. Low-temperature diffusion of lithium in silicon-germanium solid solutions

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

   СтатьяSemiconductor materials and interfacesPhysics of the Solid State2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.251132