Работы, цитирующие эту работу

Работ: 2

Работа: Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

1. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

   A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

   СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570280

2. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

   Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

   СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570281