Работы, цитирующие эту работу

Работ: 2

Работа: Electrostatic force microscopy: principles and some applications to semiconductors

1. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

   A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

   СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570280

2. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

   Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

   СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570281