Работы, цитирующие эту работу

Работ: 2

Работа: Positron Studies of Defects in III–V Semiconductor Compounds

1. Positron Trapping at Point Defects in Electron-Irradiated GaAs

   V. N. Brudnyı̆, A. D. Pogrebn Yak, Yu. P. Surov +1

   СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1989Цитирований: 0

   ABIABI:AkademIndex/openalex/1989.article.000126

2. Change in the energy of Jahn-Teller configurations of vacancy-donor complexes induced by uniaxial strain

   N. S. Averkiev, A. A. Gutkin, M. A. Reshchikov

   СтатьяRare-earth and actinide compoundsSemiconductors1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000107