Работы, на которые ссылается эта работа

Работ: 6

Работа: Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

1. Physics of Semiconductor Devices

   J.-P. Colinge, Cindy Colinge

   Книга2002Цитирований: 58

   ABIABI:AkademIndex/openalex/2026.other.199260

2. Physics of Semiconductor Devices

   Samarth Jain, S. Radhakrishna

   Статья1987Цитирований: 15

   ABIABI:AkademIndex/openalex/2026.other.215225

3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

   T. S. Kamilov, V. P. Chirva, D.K. Kabilov

   СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11

   ABIABI:AkademIndex/openalex/2026.other.199244

4. On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures

   T. S. Kamilov, B L Sadullaev, U Sh Ganiev +1

   Статья1998Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.199253

5. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

   Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4

   ABIABI:AkademIndex/openalex/2011.article.000139

6. Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes

   A. E. Belyaev, Volodymyr V. Basanets, Н. С. Болтовец +11

   Статья2011Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.615669