Работы, цитирующие эту работу

Работ: 2

Работа: Molecular-beam epitaxial growth of CdTe(112) on Si(112) substrates

1. Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

   Sh. U. Yuldashev, Igor L. Bolotin, Y. B. Hou +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Applied Physics1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000143

2. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006836