Работы, цитирующие эту работу

Работ: 2

Работа: Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

1. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000233

2. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000250