Работы, цитирующие эту работу

Работ: 2

Работа: Depletion widths of the metal-insulator semiconductor (MIS) structure

1. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1

   ABIABI:AkademIndex/openalex/1982.article.000074

2. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000099