Работы, цитирующие эту работу

Работ: 3

Работа: MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

1. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2005.article.000252

2. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   СтатьяSemiconductor materials and interfaces2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609626

3. About the Interface Between the Higher Manganese Silicide Film and Si (111)

   T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

   СтатьяSemiconductor materials and interfaces2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000312