Работы, цитирующие эту работу

Работ: 3

Работа: Trap creation in silicon dioxide produced by hot electrons

1. Tunable SiO2/Si-based nanostructures

   А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

   СтатьяAdvanced Surface Polishing TechniquesInorganic Materials2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000389

2. Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide

   A. É. Atamuratov

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.chapter.000024

3. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

   A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000894