Работы, цитирующие эту работу

Работ: 1

1. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

   Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000340