Работы, цитирующие эту работу

Работ: 3

Работа: Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

   D. V. Saparov

   СтатьяZnO doping and propertiesJournal of Crystal Growth2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008412

3. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

   СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007804