Работы, цитирующие эту работу

Работ: 2

Работа: Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

   D. V. Saparov

   СтатьяZnO doping and propertiesJournal of Crystal Growth2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008412