Работы, цитирующие эту работу

Работ: 2

Работа: Epitaxial Growth of GaN/AlN on <i>h</i>-BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

   СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007804