Работы, цитирующие эту работу

Работ: 2

Работа: Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

   ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000184

2. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

   СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007804