S.V. Martynchenko

7 та иш

AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

1. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   МақолаGraphite, nuclear technology, radiation studies19950 иқтибос

   ABIABI:AkademIndex/openalex/1995.article.000183

2. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   МақолаSilicon and Solar Cell Technologies19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000299

3. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   МақолаSilicon and Solar Cell Technologies19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000307

4. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

   M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

   МақолаSemiconductor materials and interfacesMRS Proceedings19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000278

5. Characteristics of the formation of radiation defects in silicon structures

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   МақолаGraphite, nuclear technology, radiation studiesTechnical Physics19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000127

6. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   МақолаSemiconductor materials and interfaces19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000277

7. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   МақолаSilicon and Solar Cell Technologies19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000293