É. V. Kanaki

2 та иш

Beruni Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan

1. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   МақолаSilicon and Solar Cell TechnologiesSemiconductors20001 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000183

2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

   Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

   МақолаSilicon Carbide Semiconductor TechnologiesSemiconductors20010 иқтибос

   ABIABI:AkademIndex/openalex/2001.article.000090