U. T. Davlatov

2 та иш

Physical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

1. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

   А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

   МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20012 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.251138

2. Study of current-voltage characteristics of Si-(Si 2 ) 1-x (GaAs) x grown on polycrystal silicon substrate by Liquid Phase Epitaxy method

   А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

   МақолаSemiconductor materials and interfaces20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000378