Ушбу ишга иқтибос қилган ишлар

1 та иш

Иш: Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

1. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000098