Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

1. Some features of photocurrent generation in single- and multibarrier photodiode structures

   A. V. Karimov, D. M. Yodgorova

   МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000151

2. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   МақолаSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000273

3. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

   A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

   БобSemiconductor materials and interfacesInTech eBooks20111 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.510896

4. Determination of potential distribution in a three-barrier structure

   D. M. Yodgorova, Physics-Sun", e-mail: [email protected]

   МақолаSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000413

5. Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs

   O. A. Abdulkhaev, Anvar A’zamovich Yakubov, F. A. Giyasova +3

   МақолаSemiconductor materials and interfaces2020 International Conference on Information Science and Communications Technologies (ICISCT)20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.001360