Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

1. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

   A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000211

2. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000230