Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

1. Сарлавҳасиз

   Бошқа6 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526570

2. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

   Мақола20004 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.396897

3. Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

   A. А. Lebedev, Anatoly M. Strel’chuk, Denis Davydov +5

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.413673

4. MBE growth and properties of SiC multi-quantum well structures

   A. Fissel, Ute Kaiser, Bernd Schröter +2

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566567

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566566

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566568

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566569