Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

1. Deep level centers in silicon carbide: A review

   A. А. Lebedev

   Шарҳ мақола19996 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390745

2. Сарлавҳасиз

   Бошқа6 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526570

3. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

   Мақола20004 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.396897

4. MBE growth and properties of SiC multi-quantum well structures

   A. Fissel, Ute Kaiser, Bernd Schröter +2

   Мақола20013 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.566567

5. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

   A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000117

6. Сарлавҳасиз

   Бошқа2 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.530080

7. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

   Robert S. Okojie, Ming Xhang, Pirouz Pirouz +3

   Мақола20012 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652876

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.652875