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Иш: High Energy Resolution Detectors Based on 4H-SiC

1. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000250