Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

1. Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics

   A. Erko, N. V. Abrosimov, V. Alex

   Мақола20026 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609957

2. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

   I. G. Atabaev

   МақолаSemiconductor materials and interfacesComputational Materials Science20013 иқтибос

   ABIABI:AkademIndex/openalex/2001.article.000189

3. Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing

   Michael Glück, J. Hersener, H.G. Umbach +2

   Мақола19972 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609962

4. Radiation Defects Formation in Si<Ge>

   Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin +3

   Мақола19992 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609963

5. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   МақолаSemiconductor materials and interfacesInorganic Materials20051 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000180

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669481

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.669482