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24 та иш

Иш: Effect of Be codoping on the photoluminescence spectra of GaMnAs

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

    T. Dietl, Hideo Ohno, F. Matsukura +2

    Мақола200016 иқтибос
    ABI

  3. Effect of the location of Mn sites in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>on its Curie temperature

    K. M. Yu, W. Walukiewicz, T. Wójtowicz +4

    Мақола20025 иқтибос
    ABI

  4. Optical characterisation of MOVPE-grown Ga1−Mn As semimagnetic semiconductor layers

    Th. Hartmann, M. Lampalzer, W. Stolz +4

    Мақола20004 иқтибос
    ABI

  5. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

    Y. Iye, A. Oiwa, Akira Endo +5

    Мақола19994 иқтибос
    ABI

  6. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

    Hiroshi Ohno, Aidong Shen, F. Matsukura +4

    Мақола19963 иқтибос
    ABI

  7. Hybrid ferromagnetic/semiconductor heterostructures for spintronics

    Nitin Samarth, Seung‐Hyun Chun, K. C. Ku +2

    Мақола20033 иқтибос
    ABI

  8. Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt

    К. С. Журавлев, Т. С. Шамирзаев, N. A. Yakusheva

    Мақола19983 иқтибос
    ABI

  9. Influence of manganese contamination on high-mobility GaAs∕AlGaAs heterostructures

    K. Wagenhuber, H.-P. Tranitz, M. Reinwald +1

    Мақола20043 иқтибос
    ABI

  10. Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures

    K. Wagenhuber, H. -p. Tranitz, M. Reinwald +1

    Мақола20043 иқтибос
    ABI

  11. Effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors

    Sang‐Hoon Lee, S. J. Chung, I. S. Choi +8

    Мақола20033 иқтибос
    ABI

  12. Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors

    Hideo Ohno, H. Munekata, T. Penney +2

    Мақола19923 иқтибос
    ABI

  13. Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers

    Sh. U. Yuldashev, Hyunsik Im, Vadim Sh. Yalishev +6

    МақолаZnO doping and propertiesApplied Physics Letters20032 иқтибос
    ABI

  14. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

    P. B. Parchinskiy, Fu Yu, Se Young Jeong +4

    МақолаZnO doping and propertiesApplied Surface Science20062 иқтибос
    ABI

  15. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    МақолаZnO doping and propertiesSemiconductors20072 иқтибос
    ABI

  16. Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

    Koji Onomitsu, Hideo Fukui, Takashi Maeda +2

    Мақола20052 иқтибос
    ABI

  17. Photoconductivity and <i>n</i>- to <i>p</i>-type transition in silicon planar-doped GaAs structures with a doped cap layer

    A. G. de Oliveira, G. M. Ribeiro, D. A. W. Soares +3

    Мақола19952 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

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    Бошқа1 иқтибос
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    Бошқа1 иқтибос
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  24. Сарлавҳасиз

    Бошқа1 иқтибос
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