Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Highly sensitive photodetector based on ge double-barrier punch-through structure

1. InGaAsP heterostructure avalanche photodiodes with high avalanche gain

   Katsuhiko Nishida, K. Taguchi, Yoshishige Matsumoto

   Мақола19795 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.534518

2. Some features of photocurrent generation in single- and multibarrier photodiode structures

   A. V. Karimov, D. M. Yodgorova

   МақолаAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000151

3. Influence of neutron radiation on breakdown voltage of silicon voltage limiter

   A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2

   МақолаEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 иқтибос

   ABIABI:AkademIndex/openalex/2012.article.000232

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.619514