Ушбу иш иқтибос қилган ишлар

3 та иш

Иш: Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

1. Сарлавҳасиз

   Бошқа1117 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.000713

2. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213638

3. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.095294