Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

   S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

   МақолаIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 иқтибос

   ABIABI:AkademIndex/openalex/2014.article.000062

2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

   Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

   МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000028

3. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

   Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.196457

4. Transition layer formation simulation during film deposition by an ion-molecular beam

   T.S. Pugacheva

   МақолаIon-surface interactions and analysisRadiation Effects19873 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.503216