Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: The Effect of the Formation of Silicides on the Resistivity of Silicon

1. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

   Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

   МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20204 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000869

2. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   МақолаSemiconductor materials and interfacesSemiconductors20204 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.402217

3. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

   G. Kh. Allayarova

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20222 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.001457

4. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   МақолаSemiconductor materials and interfacesTechnical Physics Letters20210 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.004233

5. CHANGES IN THE SURFACE OF CdS BOMBARDED BY O+ IONS

   Sodikjanov Jakhongirbek Shukhratbek Ugli

   МақолаQuantum Dots Synthesis And PropertiesThe American Journal of Engineering And Technology20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.012516