Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

  1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос
    ABI

  2. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    Мақола2D Materials and ApplicationsApplied Sciences20231 иқтибос
    ABI

  3. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос
    ABI

  4. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос
    ABI

  5. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 иқтибос
    ABI