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14 та иш

Иш: The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Мақола20126 иқтибос
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Мақола20116 иқтибос
    ABI

  4. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  5. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Мақола20185 иқтибос
    ABI

  6. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    МақолаAdvancements in Semiconductor Devices and Circuit Design20144 иқтибос
    ABI

  7. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Мақола20184 иқтибос
    ABI

  8. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Мақола20093 иқтибос
    ABI

  9. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

    J. P. Campbell, Lihua Yu, Kin P. Cheung +4

    Мақола20093 иқтибос
    ABI

  10. Multi-gate SOI MOSFETs

    J.-P. Colinge

    Мақола20072 иқтибос
    ABI

  11. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Мақола20172 иқтибос
    ABI

  12. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Мақола20182 иқтибос
    ABI

  13. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Мақола20192 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI