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Иш: Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

1. Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

   Р. Х. Хамидов, О. О. Маматкаримов

   МақолаHigh-pressure geophysics and materialsInstruments and Experimental Techniques202211 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000422

2. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

   О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

   МақолаElectromagnetic Launch and Propulsion TechnologySemiconductors20002 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000081

3. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

   О. О. Маматкаримов, Р. Х. Хамидов

   МақолаForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000115