Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

1. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

   Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002404

2. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009031

3. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   МақолаThermal properties of materialsAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009659