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13 та иш

Иш: Effect of ${\text{O}}_{2}^{ + }$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

  1. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос
    ABI

  2. An ion track based approach to nano- and micro-electronics

    K. Hoppe, W. R. Fahrner, D. Fink +7

    Мақола20089 иқтибос
    ABI

  3. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

    Shinji Takeoka, Minoru Fujii, Shinji Hayashi

    Мақола20007 иқтибос
    ABI

  4. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    МақолаTransition Metal Oxide NanomaterialsTechnical Physics20206 иқтибос
    ABI

  5. Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

    Е. С. Демидов, Alexey Mikhaylov, A. I. Belov +7

    Мақола20115 иқтибос
    ABI

  6. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

    Yu. K. Undalov, Е. И. Теруков

    Мақола20155 иқтибос
    ABI

  7. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

    Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20204 иқтибос
    ABI

  8. Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmosphere

    F. Rochet, G. Dufour, H. Roulet +5

    Мақола19884 иқтибос
    ABI

  9. Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

    R. Krishnan, Qiwei Xie, J. Kulik +6

    Мақола20044 иқтибос
    ABI

  10. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20222 иқтибос
    ABI

  11. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

    Christian Reichel, Frank Feldmann, Ralph Müller +6

    Мақола20152 иқтибос
    ABI

  12. ЭЛЕКТРОННАЯ СПЕКТРОСКОПИЯ НАНОСТРУКТУР СdMeTe, СОЗДАННЫХ НА ПОВЕРХНОСТИ СdTe МЕТОДОМ ИОННОЙ БОМБАРДИРОВКИ

    Б.Е. Умирзаков, Ё.С. Эргашов, Ш.Ф. Худойберганова +1

    Мақола20192 иқтибос
    ABI

  13. Влияние дополнительной имплантации ионов кислорода на дислокационную люминесценцию кремния, содержащего кислородные преципитаты

    Н.А. Соболев, А.Е. Калядин, К.Ф. Штельмах +1

    Мақола20212 иқтибос
    ABI