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Ушбу иш иқтибос қилган ишлар

9 та иш

Иш: Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

  1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy201513 иқтибос
    ABI

  2. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

    Мақола199813 иқтибос
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    МақолаSemiconductor materials and interfacesInorganic Materials20125 иқтибос
    ABI

  4. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Мақола20175 иқтибос
    ABI

  5. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

    Yu. A. Astrov, Stephen A. Lynch, V. B. Shuman +3

    Мақола20133 иқтибос
    ABI

  6. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

    Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

    Мақола20093 иқтибос
    ABI

  7. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI

  8. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    МақолаChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI