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23 та иш

Иш: Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Мақола202413 иқтибос
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Мақола201211 иқтибос
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Мақола201611 иқтибос
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  6. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Мақола201910 иқтибос
    ABI

  7. Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

    L. O. Olimov, Iqboljon Ibroximovich Anarboyev

    МақолаSilicon Nanostructures and PhotoluminescenceSilicon202210 иқтибос
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
    ABI

  10. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
    ABI

  11. Model of the grain boundary in p-n structures based on polycrystalline semiconductors

    L. O. Olimov

    Мақола20109 иқтибос
    ABI

  12. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Мақола20198 иқтибос
    ABI

  13. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    МақолаThin-Film Transistor TechnologiesSemiconductors20108 иқтибос
    ABI

  14. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Мақола20147 иқтибос
    ABI

  15. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Мақола20157 иқтибос
    ABI

  16. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    МақолаSilicon and Solar Cell TechnologiesSemiconductors20127 иқтибос
    ABI

  17. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Мақола20156 иқтибос
    ABI

  18. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Мақола20116 иқтибос
    ABI

  19. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Мақола20196 иқтибос
    ABI

  20. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Мақола20216 иқтибос
    ABI

  21. Si microwire-array solar cells

    Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6

    Мақола20105 иқтибос
    ABI

  22. Influence of alkali metals on electrical resistance of poly-Si structures for solar cells

    L. O. Olimov

    МақолаThin-Film Transistor TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  23. Mechanism of thermoelectric material efficiency increase

    Iqboljon Anarboyev, L. O. Olimov

    МақолаAdvanced Thermoelectric Materials and DevicesAIP conference proceedings20242 иқтибос
    ABI