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Иш: Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
ABI
OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES
Jo`shqin Abdullayev, I. B. Sapaev
Мақола202413 иқтибос
ABI
Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
ABI
Modeling and calibration of electrical features of p-n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev
МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
ABI
Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
ABI
Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Jo`shqin Abdullayev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
ABI
Regularized Solution of the Cauchy Problem in an Unbounded Domain
Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian
Мақола20227 иқтибос
ABI
Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 иқтибос
ABI
ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE
Olzat Toktarbaiuly
Мақола20246 иқтибос
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Solution of the Ill-Posed Cauchy Problem for Systems of Elliptic Type of the First Order
Davron Aslonqulovich Juraev, Ali Shokri, Daniela Marian
Мақола20226 иқтибос
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Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
ABI
The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
ABI
Si microwire-array solar cells
Morgan C. Putnam, Shannon W. Boettcher, Michael D. Kelzenberg +6
Мақола20105 иқтибос
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Coverage properties of silicon nitride film prepared by the Cat-CVD method
S. Osono, Y. Uchiyama, Makiko Kitazoe +5
Мақола20033 иқтибос
ABI
Silicon Nanowires for Photovoltaic Solar Energy Conversion
Kui‐Qing Peng, Shuit‐Tong Lee
Шарҳ мақола20102 иқтибос
ABI
Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review
Antonio Alessio Leonardi, Maria José Lo Faro, Alessia Irrera
Шарҳ мақола20212 иқтибос
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Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello
Мақола20242 иқтибос
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