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22 та иш

Иш: Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

  1. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Мақола199810 иқтибос
    ABI

  2. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Мақола19749 иқтибос
    ABI

  3. Photoluminescence study of the surface modified and MEH-PPV coated cotton fibers

    A. S. Zakirov, Sh. U. Yuldashev, H.J. Wang +4

    МақолаOrganic Electronics and PhotovoltaicsJournal of Luminescence20106 иқтибос
    ABI

  4. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    В. А. Козлов, Vitalii V. Kozlovski

    Мақола20016 иқтибос
    ABI

  5. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 иқтибос
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20243 иқтибос
    ABI

  7. Functional hybrid materials derived from natural cellulose

    A. S. Zakirov, Sh. U. Yuldashev, Hak Dong Cho +4

    МақолаConducting polymers and applicationsJournal of the Korean Physical Society20123 иқтибос
    ABI

  8. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20243 иқтибос
    ABI

  9. Defective Structure of Silicon Doped with Dysprosium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20243 иқтибос
    ABI

  10. Capacitance Transient Spectroscopy

    G. L. Miller, D. V. Lang, Lionel C. Kimerling

    Мақола19773 иқтибос
    ABI

  11. First-principles study of radiation defects in silicon

    Vladislav Pelenitsyn, Pavel Korotaev

    Мақола20223 иқтибос
    ABI

  12. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

    Ioana Pintilie, G. Lindstroem, Alexandra Junkes +1

    Мақола20093 иқтибос
    ABI

  13. Morphology of the Surface of Silicon Doped with Lutetium

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

    Мақола20242 иқтибос
    ABI

  14. Study of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +2

    Мақола20242 иқтибос
    ABI

  15. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 иқтибос
    ABI

  16. Recent Progress in Silicon−Based Materials for Performance−Enhanced Lithium−Ion Batteries

    Xiangzhong Kong, Ziyang Xi, Linqing Wang +6

    Шарҳ мақола20232 иқтибос
    ABI

  17. Scanning Electron Microscopy and X-ray Microanalysis

    Joseph I. Goldstein, Dale E. Newbury, Patrick Echlin +5

    Китоб20032 иқтибос
    ABI

  18. Сарлавҳасиз

    Бошқа1 иқтибос
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  19. Сарлавҳасиз

    Бошқа1 иқтибос
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  20. Сарлавҳасиз

    Бошқа1 иқтибос
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  21. Сарлавҳасиз

    Бошқа1 иқтибос
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  22. Сарлавҳасиз

    Бошқа1 иқтибос
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