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Иш: Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
ABI
OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES
Jo`shqin Abdullayev, I. B. Sapaev
Мақола202413 иқтибос
ABI
Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
ABI
Influence of the parameters to transition capacitance at NCDS-PSI heterostructure
I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5
МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
ABI
Modeling and calibration of electrical features of p-n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev
МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial p-n junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
ABI
Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
ABI
Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Jo`shqin Abdullayev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
ABI
Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6
МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 иқтибос
ABI
Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
ABI
The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
МақолаChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 иқтибос
ABI
Heterointegration of Pt/Si/Ag Nanowire Photodiodes and Their Photocatalytic Properties
Yongquan Qu, Xue Teng, Xing Zhong +4
Мақола20102 иқтибос
ABI
Photonic Nanowires: From Subwavelength Waveguides to Optical Sensors
Xin Guo, Yibin Ying, Limin Tong
Мақола20132 иқтибос
ABI
Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
Felipe Rodrigues Gare Carnielli, Marcelo Antonio Pavanello
Мақола20242 иқтибос
ABI
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