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8 та иш

Иш: Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

  1. Asynchronous in motors reactive power current for monitoring and control modifiers scientific, ETC

    M. T. Makhsudov, Odiljon Zaripov, Nigora Akbarova +1

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings202415 иқтибос
    ABI

  2. Influence of operation of an adjustable electric drive of a centrifugal pump on the level of pollution by electromagnetic interference

    Yalkin Adilov, Almukhan Nuraliyev, Azamat Esenbekov +1

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings202411 иқтибос
    ABI

  3. Analysis of the process of Emf and current generation in Si/Si film structures obtained by vacuum deposition

    Samad Nimatov, Х. Б. Ашуров, Sherzod Kuchkanov +3

    МақолаPhotovoltaic System Optimization TechniquesAIP conference proceedings202411 иқтибос
    ABI

  4. Study of the motion of gas and solid phase in the vortex apparatus VS-800 according to the energy system

    Kalibek Shamsiyev, Ikromjon Umarov, Rakhmatilla Karimov

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings202411 иқтибос
    ABI

  5. Characteristics of drawing transformer devices in electrical supply system and study of current converters

    Sulton Amirov, Yulchi Shoyimov, Shaxnoza Matkasimova +3

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings202411 иқтибос
    ABI

  6. Possibilities of wastewater treatment and reuse in thermal power plants

    Rixsibek Yusupaliyev, Nargiza M. Kurbanova, Munira M. Azimova +2

    МақолаEngineering and Agricultural InnovationsAIP conference proceedings202411 иқтибос
    ABI

  7. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20195 иқтибос
    ABI

  8. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    МақолаIon-surface interactions and analysisE3S Web of Conferences20234 иқтибос
    ABI