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Иш: Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells
Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells
U. I. Erkaboev, R. G. Rakhimov
МақолаSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 иқтибосABI